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A Novel Switched Inductor–Capacitor Based Quasi Z-Source Inverter with Enhanced Voltage Gain and Reduced Voltage Stresses Across Semiconductors
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Zahra Shakeri alamshiri   , Tohid Nouri *1 , Mahdi Shaneh , Sara Hasanpour |
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Abstract: (5 Views) |
An improved topology for the developed impedance network (IM) inverter containing a common ground between the input source and the inverter bridge is proposed in this paper. As a result of the limited boost aptitude of the traditional IM, the proposed inverter enhances the boost aptitude using a combination of inductor-capacitor cells. Therefore, the originality of the proposed inverter compared with traditional IM inverters having the same number of passive and active components is that it delivers advantages such as higher voltage step-up gain, lower switch voltage stress at the same voltage gain, and the need for smaller inductors in the IM. It is proven that the boost factor of the proposed inverter is considerably higher than that of the other seven topologies and accordingly higher than those of the EB-ZSI as well as EB-qZSI for a shoot-through duty ratio (D) of above 0.25. Moreover, the total capacitor voltage stress in the proposed inverter is less than that of other high gain inverters, including EB-ZSI, EB-qZSI, and EEB-ZSI. The structure of the proposed topology and its theoretical analysis are presented, followed by an extensive performance comparison with the state-of-the-art topologies. Finally, the simulation and experimental results confirming the outstanding performance of the proposed topology are provided.
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| Keywords: boost factor, quasi-Z-source inverter (qZSI), switched-inductor (SL), high-gain voltage. |
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Type of Study: Research |
Received: 2026/07/10 | Accepted: 2026/08/19 | Published: 2026/09/2
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