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:: Volume 14, Issue 3 (10-2025) ::
ieijqp 2025, 14(3): 0-0 Back to browse issues page
A Novel Bipolar Bootstrap Method for IGBT Switches
Iman A.Abiane *1 , Mohammad Taaleb1
1- Sharif university of technology
Abstract:   (8 Views)

Switching topologies with two transistors appearing on the same leg require two isolated voltage sources for each gate driver. Therefore, bootstrap topology is used in gate drivers to isolate the grounds of each gate driver. Bootstrap topology is well known in unipolar switching, when the turn-off voltage of transistor is equal to zero. Unipolar gate driving can cause unintended turn-ons in switches due to milers capacitance or stray inductance and also parastatic turn-on. To mitigate this issue, bipolar gate driver sources are used. however, bipolar gate drivers are more complex than the unipolar gate drivers. In some papers bipolar bootstrap topologies are introduced but they are not optimal in size or element count. In this paper, a new bipolar bootstrap topology is proposed in which it does not need a new control signal and does not use high voltage and large elements and has minimum count of electrical elements. Therefore, this topology uses less real-estate in PCB designs compared to conventional bipolar gate drivers. In this paper, the proposed topology of bipolar bootstrap is simulated and the optimal performance is verified by means of experimental results.
 

Keywords: Switch-mode power converters, Gate Driver, Bipolar Bootstrap, Negative Pulse
     
Type of Study: Research |
Received: 2025/04/27 | Accepted: 2025/08/2 | Published: 2025/10/8
References
1. [1] L. Balogh, "Fundamentals of mosfet and igbt gate driver circuits," Texas Instruments-Application report, SLUA618-March, pp.28-33, 2017.
2. [2] R. Herzer, "Integrated gate driver circuit solutions,"in 2010 6th International Conference on Integrated Power Electronics Systems, pp.1-10, IEEE, 2010.
3. [3] L. Dulau, S. Pontarollo, A. Boimond, J.-F. Garnier, N. Giraudo, and O. Terrasse, "A new gate driver integrated circuit for igbt devices with advanced protections," IEEE Transactions on Power Electronics,vol.21, no.1, pp.38-44, 2006.
4. [4] Y. Lee and J. Kim, "Analysis of bootstrap circuit operation with an inverted pwm drive scheme for a threephase inverter for a brushless dc motor drive," Canadian Journal of Electrical and Computer Engineering, vol.42, no.1, pp.58-65, 2019. [DOI:10.1109/CJECE.2019.2891850]
5. [5] J.-H. Jung, H.-K. Ku, W.-S. Im, and J.-M. Kim, "A carrier-based pwm control strategy for three-level npc inverter based on bootstrap gate drive circuit," IEEE Transactions on Power Electronics, vol.35, no.3, pp.2843-2860, 2019. [DOI:10.1109/TPEL.2019.2930088]
6. [6] W. Lin, S. Pan, J. Gong, Z. Lin, K. Dai, and X. Zha, "Design considerations of bootstrap gate driver with fault mitigation for si-and gan-based high-current converters," IEEE Transactions on Industrial Electronics, 2024. [DOI:10.1109/TIE.2024.3349522]
7. [7] M. J. Mnati, A. Van den Bossche, and J. M. V. Bikorimana, "Design of a half-bridge bootstrap circuit for grid inverter application controled by pic24fj128ga010," in 2016 IEEE International Conference on Renewable Energy Research and Applications (ICRERA), pp.85-89, IEEE, 2016. [DOI:10.1109/ICRERA.2016.7884409]
8. [8] L. Callegaro, M. Ciobotaru, D. J. Pagano, and J. E. Fletcher, "Control design for photovoltaic power optimizers using bootstrap circuit," IEEE Transactions on Energy Conversion, vol.34, no.1, pp.232-242, 2018. [DOI:10.1109/TEC.2018.2874157]
9. [9] N. Mitrovic, R. Enne, and H. Zimmermann, "A bootstrap circuit for dc-dc converters with a wide input voltage range in hv-cmos," in 2016 39th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), pp.62-65, IEEE, 2016. [DOI:10.1109/MIPRO.2016.7522111]
10. [10] W.-C. Chen, Y.-W. Chou, M.-W. Chien, H.-C. Chen,S.-H. Yang, K.-H. Chen, Y.-H. Lin, C.-C. Lee, S.R. Lin, and T.-Y. Tsai, "A dynamic bootstrap voltage techniqueforahigh-efficiencybuckconverterinauniversal serial bus power delivery device," IEEE Transactions on Power Electronics, vol.31, no.4, pp.3002- 3015, 2015. [DOI:10.1109/TPEL.2015.2453511]
11. [11] K. Abe, K. Nishijima, K. Harada, T. Nakano, T. Nabeshima, and T. Sato, "A novel three-phase buck converter with bootstrap driver circuit," in 2007 IEEE Power Electronics Specialists Conference, pp.1864- 1871, IEEE, 2007. [DOI:10.1109/PESC.2007.4342286]
12. [12] X. Ming, Z. Fan, Y. Xin, X. Zhang, F. Shi, S. Pan, J. Zhang, Z. Wang, and B. Zhang, "An advanced bootstrap circuit for high frequency, high area-efficiency and low emi buck converter," IEEE Transactions on Circuits and Systems II: Express Briefs, vol.66, no.5, pp.858-862, 2019. [DOI:10.1109/TCSII.2019.2909045]
13. [13] "Driving igbts with unipolar gate voltage," AIM PMD ID AE., AN-2006-01
14. [14] R. West, "Bipolar bootstrap top switch gate driver for half-bridge semiconductor power topologies," U.S. patent US20060034107A1.
15. [15] J.-M. Lee, S. Chmielus, and C.-Y. Won, "A negative voltage supply for high-side switches using buckboost bootstrap circuitry," in 2014 IEEE Applied Power Electronics Conference and Exposition-APEC 2014, pp.889-893, IEEE, 2014. [DOI:10.1109/APEC.2014.6803413]
16. [16] P. M. Roschatt, S. Pickering, and R. A. McMahon, "Bootstrap voltage and dead time behavior in gan dc- dc buck converter with a negative gate voltage," IEEE Transactions on Power Electronics, vol.31, no.10, pp.7161-7170, 2015. [DOI:10.1109/TPEL.2015.2507860]
17. [17] J.-C. Crebier, M. H. Tran, J. Barbaroux, and P.-O. Jeannin, "Implementation and operational investigations of bipolar gate drivers," in 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp.248-255, IEEE, 2010. [DOI:10.1109/APEC.2010.5433664]
18. [18] Onsemi, "Design and application guide of bootstrap circuit for high-voltage gate-drive ic," AN-6076.
19. [19] Onsemi, "Fod3120 - gate drive optocoupler, high noise immunity, 2.5 a output current," Datasheet


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A.Abiane I, Taaleb M. A Novel Bipolar Bootstrap Method for IGBT Switches. ieijqp 2025; 14 (3)
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Volume 14, Issue 3 (10-2025) Back to browse issues page
نشریه علمی- پژوهشی کیفیت و بهره وری صنعت برق ایران Iranian Electric Industry Journal of Quality and Productivity
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