A Novel Bipolar Bootstrap Method for IGBT Switches

A.Abiane, Iman; Taaleb, Mohammad

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Iranian Electric Industry Journal of Quality and Productivity

نشریه علمی- پژوهشی کیفیت و بهره وری صنعت برق ایران

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Volume 14, Issue 3 (10-2025)

ieijqp 2025, 14(3): 11-18

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A Novel Bipolar Bootstrap Method for IGBT Switches

Iman A.Abiane ^*¹

, Mohammad Taaleb¹

1- Sharif university of technology

Abstract: (251 Views)

Switching topologies with two transistors appearing on the same leg require two isolated voltage sources for each gate driver. Therefore, bootstrap topology is used in gate drivers to isolate the grounds of each gate driver. Bootstrap topology is well known in unipolar switching, when the turn-off voltage of transistor is equal to zero. Unipolar gate driving can cause unintended turn-ons in switches due to milers capacitance or stray inductance and also parastatic turn-on. To mitigate this issue, bipolar gate driver sources are used. however, bipolar gate drivers are more complex than the unipolar gate drivers. In some papers bipolar bootstrap topologies are introduced but they are not optimal in size or element count. In this paper, a new bipolar bootstrap topology is proposed in which it does not need a new control signal and does not use high voltage and large elements and has minimum count of electrical elements. Therefore, this topology uses less real-estate in PCB designs compared to conventional bipolar gate drivers. In this paper, the proposed topology of bipolar bootstrap is simulated and the optimal performance is verified by means of experimental results.

Keywords: Switch-mode power converters, Gate Driver, Bipolar Bootstrap, Negative Pulse

Full-Text [PDF 824 kb] (89 Downloads)

Type of Study: Research |
Received: 2025/04/27 | Accepted: 2025/08/2 | Published: 2025/10/8

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